smd type ic www.kexin.com.cn 1 smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 npn epitaxial planar silicon transistor 2SC4695 features adoption of fbet process. high dc current gain. high v ebo (v ebo 25v). high reverse h fe (150 typ). small on resistance [r on =1w (i b =5ma)]. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 25 v collector current i c 500 ma collector current (pulse) i cp 800 ma base current i b 100 ma collector dissipation p c 250 mw junction temperature t j 150 storage temperature t stg -55to+150 free datasheet http:///
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =40v,i e =0 0.1 a emitter cutoff current i ebo v eb =20v,i c =0 0.1 a dc current gain h fe v ce =5v,i c = 10ma 300 1200 gain bandwidth product f t v ce =10v,i c = 10ma 250 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 3.6 pf collector-emitter saturation voltage v ce(sat) i c =100ma,i b = 2ma 0.12 0.5 v base-emitter saturation voltage v be(sat) i c =100mv,i b = 2ma 0.85 1.2 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 20 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 25 v turn-on time t on 135 ns storage time t stg 450 ns fall time t f 100 ns marking marking wt 2SC4695 free datasheet http:///
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